1) directions of ultra-thin GaTe reaches an order of 10 3 at gate voltages close to the valence-band maximum (VBM), which can be further gate tuned down to < 10, upon hole doping. We show detailed analysis and physical understandings on the GAR effect. Based on this, floating gate anisotropic memory with directional multi-level outputs are demonstrated. Moreover, when measuring along fixed direction, the few-layered GaTe floating gate memory (FGM) exhibits On/Off ratio of 10 7 and retention time of 10 5 s, which is by far the best performance among FGMs made of 2D materials. Our findings open new possibilities toward next generation nanoelectronics, such as artificial neuron network based on anisotropic memory arrays.īulk GaTe single crystals were prepared via flux method and were confirmed via x-ray diffraction (see Supplementary Fig. We mechanically exfoliated the bulk and deposited ultra-thin GaTe flakes onto 285 nm silicon oxide grown on heavily doped silicon wafers for optical and electrical characterizations. It is known that GaTe has a layered structure with lattice symmetry of group C 2h (Fig. The unit cell for a single layer GaTe is indicated in Fig.
